PHOTO COUPLER RECEIVER MODULE TRANSMITTING RECEIVER
TRANSMITTING RECEIVER
 
HOW TO USE INVISIBLE PRODUCTS
SOLDERING:
1. Soldering Bath -- 260℃±5℃ within 5 seconds.(Dip depth should under 1/16 inch below seating plane)
2. Soldering Iron Under 40W within 3 seconds. (Tip temperature:380+-5℃)
3. The neutrality flux be used before soldering
CLEANING:
1. 1. Do not use unspecified chemical liquid to clean invisible product. They could harm the invisible product. If cleaning is necessary, wipe the pin out with alcohol. Freon TE or Chlorosen at normal temperature for less Than 1 minute. Or wipe the surface with alcohol. When other chemical solutions mot specified is used. It may cause crack or haze on the surface of the Invisible product
PREVENTING OVER CURRENT:
1. Be not over current.
2. In order to operate BRIGHT INVISIBLE PRODUCTS under stable conditions. Put protective resistors in series. Resistor values can be determined by supplying voltage or current is in the invisible product. Recommended current is in the range of forward current 50mA
3. Circuit must be designed so that over voltage (over current) is not applied to the invisible product during on/off switching. Transient or pulse current will damage the junction of invisible product die.
BRIGHTNESS:
1. For obtaining even brightness. Each segment should be at the same current. So the best circuit design is to supply constant current for each segment
2. To increase brightness. Increase current. But do not over maximum rating.
3. To check the appearance defect of invisible product. The viewing distance should be 15cm minimum.
4. For obtaining more uniform brightness on SIDE LOOK and INTERRUPTER. The supplying forward current should be over 20mA , but do not be over rating.

 
QUALITY CONTROL AND ASSURANCE
CLASSIFICATION TEST ITEM DESCRIPTION AND TEST CONDITION REFERENCE STANDARD
ENDURANCE TEST OPERATION LIFE Ta: 25 ℃ + -5 ℃ Side look : IR:IF=20mA ; End look :IR:IF=50mA ; Vce =5v Time:1000hr MIL-STD-883E:1016
HIGH TEMPERATURE HIGH HUMIDITY STORAGE Ta: 65 ℃ + -5 ℃ RH:90% -95% Time: 240hrs MIL-STD-883E:1004.7 MIL-STD -202F :103B
HIGH TEMPERATURE STORAGE Ta: 125 ℃ + - 5 ℃ Time: 240hrs MIL-STD-883E:1008. 2
LOW TEMPERATURE STORAGE Ta: -55 ℃ + -5 ℃ Time: 240s+- 2hrs JIS-C-7021:B-12
ENVIRONMENTAL TEST TEMPERATURE CYCLING Ta: -55 ℃ + - 5 ℃ (30min)~25+ -5 ℃ (5min)~ 85 ℃ + -5 ℃ (30min)~25+ -5 ℃ (5min)10cycle MIL-STD-883E:1010.7
THERMAL SHOCK Ta: -55 ℃ + -5 ℃ (10min)~ 125 ℃ + -5 ℃ (10min)15cycle MIL-STD-883E:1011.9
MIL-STD -202F : 107G
SOLDER RESISTANCE To evaluate resistance of thermal stress caused by soldering Ta:260+ - 5 ℃ Time:10+ - 2 sec MIL-STD -202F :210B
SOLDERABILITY To evaluate solder ability on leads of device Ta:245+ - 5 ℃ Time:5+ - 0.5 sec MIL-STD-883E:2003.7 MIL-STD -202F : 208F 1

SELECTION GUIDE (PART NO. SYSTEM)
INFRARED EMITTING DIODE:
PHOTOTRANSISTORS:
PHOTODIODE:

 
LAMP CATEGORY:
IR: Infrared Emitting Diode
PT:Phototransistors
PD:Photodiodes
 
PACKAGE TYPE:
B : Round
C : Cylindrical
R : Rectangular
N : Side Look
 
SPECIAL DEVICE :
-1 Wider Viewing Angle
-S Leads With Stand Off(Stopper)
CHIP:
M1: GaAlAs/GaAs 940nm
M2: GaAlAs/GaAs 940nm
N0: GaAlAs/GaAlAs 880nm
O0: GaAlAs/GaAlAs 850nm
O1: GaAlAs/GaAlAs 850nm

Q0: silicon photodiode
QA: silicon photodiode
QB: silicon photodiode
QD: silicon photodiode

P0: silicon phototransistor
P1: silicon phototransistor
P2: silicon phototransistor
P4: silicon phototransistor
P6: silicon phototransistor
P7: silicon phototransistor
LEADS TYPE:
1 : 0.8〃 Long, Stand-Off Type
2 : 0.5〃 Long, Non-Reflective Type
3 : 1.0〃 Long, Reflective Type
C : For Side viewing Lead Type
D : For Photodiodes Lead Type
P : For Photodiodes Twin Chips
  Lesd Type
M : 1.0〃 Long, Reflective Type
N : 1.0〃 Long, Reflective Type
R : 1.0〃 Long, Reflective Type
 
LENS APPERANCE:
3 : Wster Clear
7 : Blue Transparent
8 : Light Blue Transparent
9 : Black(cut off 750nm)
A : Black(cut off 820nm)

 
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